Device Performance of AlGaN/GaN MOS-HEMTs Using La2O3 high-k Oxide Gate Insulator

نویسندگان

  • Chao-Wei Lin
  • Chih-Wei Yang
  • Chao-Hung Chen
  • Che-Kai Lin
  • Hsien-Chin Chiu
چکیده

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La2O3 MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current , the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing .

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تاریخ انتشار 2009