Device Performance of AlGaN/GaN MOS-HEMTs Using La2O3 high-k Oxide Gate Insulator
نویسندگان
چکیده
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La2O3 MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current , the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing .
منابع مشابه
Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model
Undoped GaN-based metal-oxide-semiconductor high-electron-mobility-transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 μm up to 40 μm. With a two-dimensional numerical simulator, we report simulation results of the GaN-based MOS-HEMTs using field-dependent drift velocity model. A developed model, taking into account polarization-induc...
متن کاملSelf-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects
Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristi...
متن کاملPulsed-laser atom probe tomography of p-type field effect transistors on Si- on-insulator substrates
Related Articles Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with liquid phase deposition-TiO2 gate oxide J. Vac. Sci. Technol. B 30, 052201 (2012) La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics J. Vac. Sci. Technol. A 30, 051507 (2012) SnO2-gated AlGaN/...
متن کاملAlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating
Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a...
متن کاملInfluence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs
After the excellent performance achieved by normally-on AlGaN/GaN high electron mobility transistors (HEMTs), research focus has shifted to normallyoff structures. We explore the advantages offered by the recessed-gate technique using our two-dimensional device/circuit simulator Minimos-NT. Excellent agreement with experimental data is achieved, and theoretical AC performance for different rece...
متن کامل